PDTC114T_SER_8

Product data sheet

Rev. 08 — 9 February 2006

4 of 11

Philips Semiconductors

PDTC114T series

NPN resistor-equipped transistors; R1 = 10 k

Ω, R2 = open

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

5

V

IO

output current

-

100

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT416

[1] -

150

mW

SOT346

[1] -

250

mW

SOT883

[2] [3] -

250

mW

SOT54

[1] -

500

mW

SOT23

[1] -

250

mW

SOT323

[1] -

200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT416

[1] -

-

833

K/W

SOT346

[1] -

-

500

K/W

SOT883

[2] [3] -

-

500

K/W

SOT54

[1] -

-

250

K/W

SOT23

[1] -

-

500

K/W

SOT323

[1] -

-

625

K/W

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