Nexperia

PEMB3

50 V, 100 mA PNP/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

-50

V

VCEO

collector-emitter voltage open base

-

-50

V

VEBO

emitter-base voltage

open collector

-

-5

V

IO

output current

-

-100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

200

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

300

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 μm copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

Tamb (°C)

-75

175

125

25

75

-25

006aac749

200

100

300

400

Ptot

(mW)

0

FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint

Fig. 1. Per device: Power derating curve

PEMB3

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Product data sheet

28 December 2022

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