CEP22N06/CEB22N06

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

50

41

1

3

-100

100

1

mΩ

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

IS

VSD

Typ

Max

60

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 11A

VDD =30V, ID = 21A,

VGS = 10V, RGEN = 45Ω

VDS = 48V, ID = 21A,

VGS = 10V

VDS = 25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = 21A

570

150

35

10

7

99

28

17

1

5

15.2

1.5

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

VGS = 5V, ID = 9A

mΩ

50

60

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d. L=0.25mH, IAS=22A, VDD=25V, RG=25Ω, Starting TJ=25 C