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L6986ITR 数据表(PDF) 21 Page - STMicroelectronics

部件名 L6986ITR
功能描述  38 V, 5 W synchronous iso-buck converter for isolated applications
PDF  60 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6986ITR 数据表(HTML) 21 Page - STMicroelectronics

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Overcurrent protection at the secondary side
The increase of the secondary output current affects the current shape at primary side. In particular, the peak
currents in the high side and low side MOSFETs rise (in absolute value in the low side, i.e. the current becomes
more negative), in accordance with equations (5) and (6)).
IPEAKHS= IOUT_pri+N∙IOUT_sec+∆IL2
(5)
IPEAKLS=−N∙IOUT_sec∙ 2D1−D −∆IL2+IOUT_prim
(6)
where IOUT_pri and IOUT_sec are respectively the primary and secondary output currents, N is the transformer turn
ratio, D the duty cycle and ΔIL the current ripple in the primary winding.
The Figure 24 depicts how these peak currents vary depending on the secondary output current, under the
specified conditions.
Normally the negative current during the off-time is more critical and the secondary output is limited by relying on
the reverse current limit (typ. 1.9 A), as shown in Figure 24.
A current drawn from the primary output helps to reduce the peak current in the low side MOSFET [as shown by
the equation (25)], hence allowing a higher current from the secondary output.
Figure 24. Peak currents depending on the secondary output current (VIN = 12 V, VOUT_pri = 5.3, N = 6, fSW
= 500 kHz, no primary output current)
0
0.4
0.8
1.2
1.6
2
2.4
0
50
100
150
200
Secondary output current [mA]
IPEAK
HS
reverse current
limit (typ.) exceeded
| IPEAK |
LS
Reverse current limit
As mentioned in the previous section, the low side MOSFET is protected against negative currents. This feature
limits the negative current in the MOSFETs especially during two events:
- Overvoltage at the primary output. Due to an overvoltage event the low side MOSFET is kept on to discharge
the primary output.
- Overcurrent or short circuit event at the secondary output, as described in the previous section.
4.10
Overvoltage protection
The overvoltage protection monitors the VFB pin and enables the low-side MOSFET to discharge the output
capacitor if the output voltage is 20% over the nominal value.
This is a second level protection and should never be triggered in normal operating conditions if the system
is properly dimensioned. In other words, the selection of the external power components and the dynamic
performance determined by the compensation network should guarantee an output voltage regulation within the
overvoltage threshold even during the worst-case scenario in term of load transitions.
Figure 25 shows the overvoltage operation during a negative steep load transient and designed with a not
optimized compensation network. This can be considered as an example for a system with dynamic performance
not in line with the load request.
L6986I
Overvoltage protection
DS13647 - Rev 2
page 21/60



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