1

Characteristics

Table 1. Absolute maximum ratings

Symbol

Parameters

Value

Unit

IT(RMS)

RMS on-state current (180° conduction angle)

Tc = 100 °C

25

A

ITSM

Non repetitive surge peak on-state current (full

cycle, Tj initial = 25 °C)

f = 60 Hz

tp = 16,7 ms

260

A

f = 50 Hz

tp = 20 ms

250

I2t

I2t value for fusing

tp = 10 ms

340

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

f = 120 Hz

Tj = 125 °C

50

A/µs

VDRM, VRRM

Repetitive peak off-state voltage

Tj = 125 °C

600 and 800

V

VDSM, VRSM

Non repetitive surge peak off-state voltage

tp = 20 ms

Tj = 25 °C

VDRM, VRRM

+ 100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

VINS

Insulation RMS voltage, 1 minute

2500

V

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless (3 quadrants)

Symbol

Parameters

Quadrant

Value

Unit

IGT(1)

VD = 12 V, RL = 33 Ω

I - II - III

Max.

50

mA

VGT

I - II - III

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

I - II - III

Min.

0.2

V

IH(2)

IT = 500 mA

Max.

75

mA

IL

IG = 1.2 IGT

I - III

Max.

80

mA

II

Max.

100

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 125 °C

Min.

1000

V/µs

(dI/dt)c(2)

Without snubber, Tj = 125 °C

Min.

22

A/ms

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

BTA25

Characteristics

DS13703 - Rev 1

page 2/10