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BA683 数据表(PDF) 3 Page - NXP Semiconductors |
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BA683 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 5 page ![]() 1996 Mar 13 3 Philips Semiconductors Product specification Band-switching diodes BA682; BA683 THERMAL CHARACTERISTICS Note 1. Device mounted on a FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient note 1 600 K/W GRAPHICAL DATA (1) Tj =75 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.2 Forward current as a function of forward voltage. handbook, halfpage 0 1.5 100 0 50 MBG308 0.5 1 I F (mA) V (V) F (1) (2) (3) VR =20V. Solid line: maximum values. Dotted line: typical values. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 10 5 10 4 10 3 10 2 10 1 150 0 MBG307 50 100 Tj ( C) o I R (nA) |
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