CEP25N65CS/CEB25N65CS

CEF25N65CS

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM e

650

1.42

178

96

24

±30

V

W

A

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS

RDS(ON)

ID

@VGS

CEP25N65CS

CEF25N65CS

650V

650V

0.125Ω

0.125Ω

24A

24A d

10V

10V

0.4

50

96 d

24 d

CEB25N65CS

650V

0.125Ω

24A

10V

RoHS compliant.

TO-220/263

TO-220F

http://www.cet-mos.com

Rev 1. 2019.Nov

Drain Current-Continuous @ TC = 25 C

@ TC = 100 C

A

15

15 d

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

C/W

62.5

0.7

RθJC

RθJA

2.5

65

Single Pulsed Avalanche Energy h

Single Pulsed Avalanche Current h

EAS

IAS

800

6

mJ

A

Details are subject to change without notice .