| 数据搜索系统,热门电子元器件搜索 |
|
CD631615B 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
CD631615B 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 CD631615B Thyristor Modules FEATURES · Long-term stability · Low Leakage Current · Base plate: Copper · Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM VDRM Repetitive Peak Reverse Voltage Repetitive Peak Forward Blocking Voltage 1600 V IT(AV) Average on-state current sin. 180; Tc = 85(100)℃ 150 A ITSM Peak, One-cycle, Non-repetitive Surge Current Tvj = 25℃; 10ms 5400 A Tvj = 125℃; 10ms 5000 I2t For Fusing Tvj = 25℃; 8,3 ...10ms 1450 KA2S Tvj = 125℃; 8,3 ...10ms 125 Viso isolation voltage a. c. 50Hz; r.m.s. ; 1s/1min 3600/3000 V~ TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT Rth j-c Thermal Resistance, Junction to Case per thyristor / per module 0.17/0.085 K/W |
类似零件编号 - CD631615B |
|
类似说明 - CD631615B |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |