BAS11 datasheet(3/7 Pages) PHILIPS

3 / 7 page

1996 Sep 26

Not recommended for new designs

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

BAS11; BAS12

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm, see Fig.8.

For more information please refer to the

“General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 300 mA; Tj =Tjmax; see Fig.5

−−

1.0

IF = 300 mA; see Fig.5

−−

1.1

V(BR)R

reverse avalanche

breakdown voltage

IR = 0.1 mA

BAS11

330

−−

BAS12

440

−−

reverse current

VR =VRRMmax; see Fig.6

−−

250

VR =VRRMmax; Tj = 125 °C; see Fig.6

−−

µA

trr

reverse recovery time

when switched from IF = 0.5 A to

IR = 1 A; measured at IR = 0.25 A;

see Fig.9

−−

µs

diode capacitance

VR = 0 V; f = 1 MHz; see Fig.7

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

180

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

340

K/W

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