BAS116 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1999 May 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

FEATURES

• Plastic SMD package

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATION

• Low leakage current applications in

surface mounted circuits.

DESCRIPTION

Epitaxial medium-speed switching

diode with a low leakage current in a

small SOT23 plastic SMD package.

PINNING

DESCRIPTION

anode

not connected

cathode

Fig.1 Simplified outline (SOT23) and symbol.

handbook, 4 columns

Top view

MAM106

n.c.

Marking code: JVp = made in Hong Kong; JVt = made in Malaysia.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

−

continuous reverse voltage

−

continuous forward current

see Fig.2; note 1

−

215

IFRM

repetitive peak forward current

−

500

IFSM

non-repetitive peak forward current square wave; Tj =25 °C prior to surge;

see Fig.4

tp =1 µs

−

tp =1ms

−

tp =1s

−

0.5

Ptot

total power dissipation

Tamb =25 °C; note 1

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

BAS116 数据表(PDF) 2 Page - NXP Semiconductors

BAS116 数据表(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

数据表下载