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BAS15 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BAS15
功能描述  High-speed diode
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BAS15 数据表(HTML) 2 Page - NXP Semiconductors

  BAS15 Datasheet HTML 1Page - NXP Semiconductors BAS15 Datasheet HTML 2Page - NXP Semiconductors BAS15 Datasheet HTML 3Page - NXP Semiconductors BAS15 Datasheet HTML 4Page - NXP Semiconductors BAS15 Datasheet HTML 5Page - NXP Semiconductors BAS15 Datasheet HTML 6Page - NXP Semiconductors BAS15 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 10
2
Philips Semiconductors
Product specification
High-speed diode
BAS15
FEATURES
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 50 V
• Repetitive peak reverse voltage:
max. 50 V
• Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
• High-speed switching
• Protection diodes in reed relays.
DESCRIPTION
The BAS15 is a high-speed switching diode fabricated in planar technology,
and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34)
package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM156
k
a
The diode is type branded.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
50
V
VR
continuous reverse voltage
50
V
IF
continuous forward current
see Fig.2; note 1
100
mA
IFRM
repetitive peak forward current
225
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
350
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C



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