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BAS16W 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BAS16W
功能描述  High-speed diode
PDF  12 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BAS16W 数据表(HTML) 2 Page - NXP Semiconductors

  BAS16W Datasheet HTML 1Page - NXP Semiconductors BAS16W Datasheet HTML 2Page - NXP Semiconductors BAS16W Datasheet HTML 3Page - NXP Semiconductors BAS16W Datasheet HTML 4Page - NXP Semiconductors BAS16W Datasheet HTML 5Page - NXP Semiconductors BAS16W Datasheet HTML 6Page - NXP Semiconductors BAS16W Datasheet HTML 7Page - NXP Semiconductors BAS16W Datasheet HTML 8Page - NXP Semiconductors BAS16W Datasheet HTML 9Page - NXP Semiconductors Next Button
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1999 May 06
2
Philips Semiconductors
Product specification
High-speed diode
BAS16W
FEATURES
• Very small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS16W is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
very small plastic SMD SOT323
package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
3
21
Top view
MAM095
2
n.c.
1
3
Marking code: A6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
175
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C



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