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BAS316 数据表(PDF) 2 Page - NXP Semiconductors |
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BAS316 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1998 Mar 26 2 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. Fig.1 Simplified outline (SOD323) and symbol. Marking code: A6. Cathode side indicated by a bar. handbook, halfpage MAM157 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current Ts =90 °C; note 1; see Fig.2 − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 4A t=1ms − 1A t=1s − 0.5 A Ptot total power dissipation Ts =90 °C; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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