BAS32L datasheet(3/7 Pages) PHILIPS

3 / 7 page

1996 Sep 10

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

ELECTRICAL CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

IF = 5 mA

620

750

IF = 100 mA

−

1000

IF = 100 mA; Tj = 100 °C

−

930

reverse current

see Fig.5

VR =20V

−

VR =75V

−

µA

VR =20V; Tj = 150 °C

−

µA

VR =75V; Tj = 150 °C

−

100

µA

V(BR)R

reverse breakdown voltage

IR = 100 µA

100

−

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

4ns

Vfr

forward recovery voltage

when switched from IF = 50 mA;

tr = 20 ns; see Fig.8

−

2.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

300

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

350

K/W

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