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BAS516 数据表(PDF) 2 Page - NXP Semiconductors |
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BAS516 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1998 Aug 31 2 Philips Semiconductors Product specification High-speed diode BAS516 FEATURES • Ultra small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. DESCRIPTION The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD523) and symbol. Marking code: 6. handbook, halfpage12 Top view MAM408 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current Ts =90 °C; note 1; see Fig.2 − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 4A t=1ms − 1A t=1s − 0.5 A Ptot total power dissipation Ts =90 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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