1999 Jun 01

2

Philips Semiconductors

Product specification

Schottky barrier (double) diodes

BAS70 series

FEATURES

• Low forward current

• High breakdown voltage

• Guard ring protected

• Small plastic SMD package

• Low diode capacitance.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits.

DESCRIPTION

Planar Schottky barrier diodes with an

integrated guard ring for stress

protection. Single diodes and double

diodes with different pinning are

available.

The diodes BAS70, BAS70-04,

BAS70-05 and BAS70-06 are

encapsulated in a SOT23 small

plastic SMD package. The BAS70-07

is encapsulated in a SOT143B small

plastic SMD package.

PINNING

PIN

DESCRIPTION

SOT23

SOT143B

BAS70

(see Fig.1b)

BAS70-04

(see Fig.1c)

BAS70-05

(see Fig.1d)

BAS70-06

(see Fig.1e)

BAS70-07

(see Fig.2)

2

n.c.

4

−−−−

Fig.1 Simplified outline (SOT23) and symbols.

d. BAS70-05.

e. BAS70-06.

b. BAS70 single diode.

a. Simplified outline SOT23.

c. BAS70-04

handbook, 2 columns

2

1

3

MGC482

Top view

handbook, 2 columns

1

3

2

n.c.

MGC483

handbook, 2 columns

MGC484

12

3

handbook, 2 columns

MGC485

12

3

handbook, 2 columns

MGC486

12

3

Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.

2

1

Top view

MAM194

2

3

4

1

MARKING

Note

1.

∗ = -: Made in Hong Kong.

∗ = t: Made in Malaysia.

TYPE NUMBER

MARKING

BAS70

73p

∗

BAS70-04

74p

∗

BAS70-05

75p

∗

BAS70-06

76p

∗

BAS70-07

77p