AP6501

Document number: DS36059 Rev. 1 - 2

4 of 15

www.diodes.com

September 2012

© Diodes Incorporated

AP6501

Electrical Characteristics (VIN = 12V, @TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

IIN

Shutdown Supply Current

VEN = 0V

0.3

3.0

µA

IIN

Supply Current (Quiescent)

VEN = 2.0V, VFB = 1.0V

0.6

1.5

mA

RDS(ON)1

High-Side Switch On-Resistance (Note 8)

130

m

Ω

RDS(ON)2

Low-Side Switch On-Resistance (Note 8)

130

m

Ω

ILIMIT

HS Current Limit

Minimum duty cycle

4.4

A

ILIMIT

LS Current Limit

From Drain to Source

0.9

A

High-Side Switch Leakage Current

VEN = 0V, VSW = 0V,

VSW = 12V

0

10

μA

AVEA

Error Amplifier Voltage Gain

(Note 8)

800

V/V

GEA

Error Amplifier Transconductance

ΔIC = ±10µA

1000

uA/V

GCS

COMP to Current Sense

Transconductance

2.8

A/V

FSW

Oscillator Frequency

VFB = 0.75V

300

340

380

kHz

FFB

Fold-back Frequency

VFB = 0V

0.30

fSW

DMAX

Maximum Duty Cycle

VFB = 800mV

90

%

TON

Minimum On Time

130

ns

VFB

Feedback Voltage

TA = -40°C to +85°C

900

925

950

mV

Feedback Overvoltage Threshold

1.1

V

VEN_Rising

EN Rising Threshold

0.7

0.8

0.9

V

EN Lockout Threshold Voltage

2.2

2.5

2.7

V

EN Lockout Hysteresis

220

mV

INUVVth

VIN Under Voltage Threshold Rising

3.80

4.05

4.40

V

INUVHYS

VIN Under Voltage Threshold Hysteresis

250

mV

Soft-Start Current

VSS = 0V

6

μA

Soft-Start Period

CSS = 0.1µF

15

ms

TSD

Thermal Shutdown (Note 8)

160

°C

Note:

8. Guaranteed by design