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BAT54SW 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BAT54SW
功能描述  Schottky barrier double diodes
PDF  5 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BAT54SW 数据表(HTML) 3 Page - NXP Semiconductors

  BAT54SW Datasheet HTML 1Page - NXP Semiconductors BAT54SW Datasheet HTML 2Page - NXP Semiconductors BAT54SW Datasheet HTML 3Page - NXP Semiconductors BAT54SW Datasheet HTML 4Page - NXP Semiconductors BAT54SW Datasheet HTML 5Page - NXP Semiconductors  
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1996 Mar 19
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAT54W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
−
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
−
600
mA
Ptot
total power dissipation (per package)
Tamb ≤ 25 °C
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.6
IF = 0.1 mA
240
mV
IF = 1mA
320
mV
IF =10mA
400
mV
IF =30mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; note 1; see Fig.7
2
µA
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA: see Fig.9
5ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.8
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W



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