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AS2333 数据表(PDF) 4 Page - Diodes Incorporated

部件名 AS2333
功能描述  1.8V, MICROPOWER CMOS ZERO-DRIFT OPERATIONAL AMPLIFIERS
PDF  16 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

AS2333 数据表(HTML) 4 Page - Diodes Incorporated

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AS2333
Document number: DS42770 Rev. 3 - 2
4 of 16
www.diodes.com
January 2021
© Diodes Incorporated
AS2333
Electrical Characteristics (@ TA = +25°C, VS= 5.0V, RL = 10kΩ connected to VS/ 2, VCM= VS / 2, and VOUT= VS / 2, unless
otherwise specified.)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Offset Voltage
VOS
Input Offset Voltage
VS = 5V
8
22
μV
∆VOS/∆T
Input Offset Voltage Drift (Note 7)
TA = -40°C to +85°C
0.02
0.1
μV/°C
TA = -40°C to +125°C
0.2
μV/°C
PSRR
Power-Supply Rejection Ratio
VS = 1.8V to 5.5V, TA = -40°C to
+125°C
1
5
μV/V
Long-Term Stability
(Note 7)
μV
Channel Separation, DC
0.1
μV/V
Input Bias Current
IB
Input Bias Current
TA = +25°C
±70
±200
pA
TA = -40°C to +125°C
±400
IOS
Input Offset Current
±140
±400
Noise
VN
Input Voltage Noise
f = 0.01Hz to 1Hz
0.3
μVPP
f = 0.1Hz to 10Hz
1.1
IN
Input Current Noise
f = 10Hz
100
fA/√Hz
Input Voltage
VCM
Common-Mode Voltage Range
(V-) - 0.1
(V+) + 0.1
V
CMRR
Common-Mode Rejection Ratio
(V-) - 0.1V < VCM < (V+) + 0.1V,
TA = -40°C to +125°C
106
120
dB
Input Capacitance
Differential
2
pF
Common-Mode
4
pF
Open-Loop Gain
AOL
Open-Loop Voltage Gain
(V-) + 100mV < VO < (V+) - 100mV,
RL = 10kΩ, TA = -40°C to +125°C
106
130
dB
Frequency Response
GBW
Gain-Bandwidth Product
CL = 100pF
350
kHz
SR
Slew Rate
G = +1
0.12
V/μs
Output
Voltage Output Swing from Rail
Positive Rail
RL = 10kΩ
TA = +25°C
30
50
mV
TA = -40°C to
+125°C
70
Negative Rail
RL = 10kΩ
TA = +25°C
10
50
TA = -40°C to
+125°C
70
ISC
Short-Circuit Current
Source Current
5
mA
Sink Current
25
mA
Open-Loop Output Impedance
f = 350kHz, IO = 0A
2
kΩ
Power Supply
VS
Specified Voltage Range
1.8
5.5
V
IQ
Quiescent Current per Amplifier
IO = 0A, TA = +25°C
12
20
μA
IO = 0A, TA = -40°C to +125°C
28
tON
Turn-On Time
VS = 5V
100
μs
Note:
7. 300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1μV.
This parameter guaranteed by design and characterization, not by testing.



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