BAV21 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 May 25

Philips Semiconductors

Product speciﬁcation

General purpose diodes

BAV20; BAV21

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

IF = 100 mA

−

1.0

IF = 200 mA

−

1.25

reverse current

see Fig.5

VR =VRmax

−

100

VR =VRmax; Tj = 150 °C

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

5pF

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA; see Fig.8

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

375

K/W

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