1996 Mar 13

2

Philips Semiconductors

Product specification

Picoampere diode

BAV45

FEATURES

• Extremely low leakage current:

max. 5 pA

• Low diode capacitance

• Light insensitive.

APPLICATION

• Clamping

• Holding

• Peak follower

• Time delay circuits

• Logarithmic amplifiers

• Protection of insulated gate

field-effect transistors.

DESCRIPTION

Silicon diode in a metal TO-18 can. It has an extremely low leakage current over

a wide temperature range combined with a low capacitance and is not sensitive

to light.

CAUTION

Handle the device with care whilst soldering into the circuit. The extremely

low leakage current can only be guaranteed when the bottom is free from

solder flux or other contaminations.

Fig.1

Simplified outline (SOT18/15; TO-18 except for the two leads)

and symbol.

k

MAM207

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

35

V

continuous reverse voltage

−

20

V

continuous forward current

see Fig.2

−

50

mA

repetitive peak forward current

−

100

mA

total power dissipation

−

200

mW

storage temperature

−65

+125

°C

junction temperature

−

125

°C