BAS21TMQ

Document number: DS37017 Rev. 2 - 2

2 of 4

www.diodes.com

March 2018

© Diodes Incorporated

BAS21TMQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

VRM

250

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

250

V

RMS Reverse Voltage

VR(RMS)

177

V

Forward Continuous Current (Note 6)

IFM

200

mA

Average Rectified Output Current (Note 6)

IO

250

mA

Non-Repetitive Peak Forward Surge Current

@ t = 10µs

@ t = 100µs

@ t = 10ms

IFSM

10

6

2

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

PD

300

mW

Thermal Resistance Junction to Ambient Air (Note 6)

RJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

V(BR)R

250



V

IR = 100µA

Forward Voltage

VF





1.0



1.25

V

IF = 100mA

IF = 200mA

Reverse Current (Note 7)

IR



100

100

nA

µA

VR = 200V

VR = 200V, TJ = +150°C

Total Capacitance

CT



5

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr



50

ns

IF = IR = 30mA,

Irr = 0.1 x IR, RL = 100

Ω

Note:

6. Part mounted on FR-4 substrate, 2oz Cu pad board with recommended pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.

7. Short duration pulse test used to minimize self-heating effect.