PBSS4350SS_1

Product data sheet

Rev. 01 — 3 April 2007

4 of 14

Nexperia

PBSS4350SS

50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

227

K/W

[2] -

-

144

K/W

[3] --87

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

--40

K/W

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

167

K/W

[2] -

-

104

K/W

[3] --63

K/W

FR4 PCB, standard footprint

Fig 2.

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aaa809

10

1

102

103

Zth(j-a)

(K/W)

10−1

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

0.01

0

0.02

0.05

0.1

0.2

0.33

0.5

0.75

1.0

duty cycle =

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