LF to 4 GHz

High Linearity Y-Mixer

Preliminary Technical Data

ADL5350

Rev. PrC

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FEATURES

Broadband RF, IF, and LO ports

Conversion loss: 6 dB

Noise figure: 6 dB

High input IP3: 26 dBm

Low LO drive level

Single-ended design: no need for baluns

Single-supply operation: 3 V @ 10 mA

Miniature 8-lead 3 mm x 2 mm LFCSP package

RoHS compliant

APPLICATIONS

Cellular base station

Point-to-point radio links

RF instrumentation

FUNCTIONAL BLOCK DIAGRAM

RF

INPUT OR

OUTPUT

IF

OUTPUT OR

INPUT

3V

RF

IF

GND

GND

LO

LO

INPUT

VPOS

GC

ADL5350

Figure 1.

GENERAL DESCRIPTION

The ADL5350 is a high linearity, up-and-down converting mixer

capable of operating over a broad input frequency range. It is well

suited for demanding cellular base-station mixer designs that

require high sensitivity and efficient blocker immunity. Based

on a GaAs pHEMT single-ended mixer architecture, the ADL5350

provides excellent input linearity and low noise figure without

the need for a high power level, local oscillator (LO) drive.

In 850 MHz/900 MHz receive applications, the ADL5350

provides a typical conversion loss of only 6 dB. The integrated

LO amplifier allows a low LO drive level, typically only 4 dBm

for most applications. The input IP3 is typically greater than

25 dBm, with an input compression point of 17 dBm. The high

input linearity of the ADL5350 makes the device an excellent

mixer for communications systems that require high blocker

immunity, such as GSM 850/900 and 800 MHz CDMA2000. At

2 GHz, a slightly greater supply current is required to obtain

similar performance.

For low frequency applications, the ADL5350 provides access to

the gate contact of the output-mixing device. This allows an

external LO coupling capacitor to be applied between the

VPOS pin and GC pin, helping to improve the LO drive to the

switching device. Using a single 100 pF capacitor allows high

performance at the lower LO frequencies.

The single-ended broadband RF/IF port allows the device to be

customized for a desired band of operation using simple

external filter networks. The LO to RF isolation is based on the

LO rejection of the RF port filter network. Greater isolation

may be achieved using higher order filter networks as described

in the Applications section of this data sheet.

The ADL5350 is fabricated on a GaAs pHEMT high

performance IC process. The ADL5350 is available in a

3 mm × 2 mm 8-lead LFCSP package. It operates over a

−40°C to +85°C temperature range. An evaluation board is also

available.