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STPS60150CT 数据表(PDF) 3 Page - STMicroelectronics |
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STPS60150CT 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() STPS60150C 3/6 Figure 1: Average forward power dissipation versus average forward current (per diode) Figure 2: Average forward current versus ambient temperature ( δ = 0.5, per diode) Figure 3: Normalized avalanche power derating versus pulse duration Figure 4: Normalized avalanche power derating versus junction temperature Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 P (W) F(AV) T δ=tp/T tp δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 I (A) F(AV) δ = 1 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 I (A) F(AV) T (°C) amb T δ=tp/T tp R=R th(j-a) th(j-c) R =15°C/W th(j-a) 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM 0 50 100 150 200 250 300 350 1.E-03 1.E-02 1.E-01 1.E+00 t(s) I (A) M IM t δ=0.5 T =50°C C T =75°C C T =125°C C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Z/R th(j-c) th(j-c) t (s) p Single pulse |
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