SOT23 PNP SILICON PLANAR

DARLINGTON TRANSISTORS

ISSUE 3 – SEPTEMBER 1995

FEATURES

* Low saturation voltage

COMPLEMENTARY TYPE –

BCV26 - BCV27

BCV46 - BCV47

PARTMARKING DETAILS –

BCV26 - ZFD

BCV46 - ZFE

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BCV26

BCV46

UNIT

Collector-Base Voltage

VCBO

-40

-80

V

Collector-Emitter Voltage

VCEO

-30

-60

V

Emitter-Base Voltage

VEBO

-10

V

Peak Pulse Current

ICM

-800

mA

Continuous Collector Current

IC

-500

mA

Base Current

IB

-100

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

BCV26

BCV46

UNIT CONDITIONS.

MIN.

MAX. MIN.

MAX.

Collector-Base

Breakdown Voltage

V(BR)CBO

-40

-80

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-30

-60

V

IC=10mA *

Emitter-Base

Breakdown Voltage

V(BR)EBO

-10

-10

V

IE=10µA

Collector Cut-Off

Current

ICBO

-100

-10

-100

-10

nA

nA

µ

A

µ

A

VCB= -30V

VCB= -60V

VCB=-30V,Tamb=150oC

VCB=-60V,Tamb=150oC

Emitter Base

Cut-Off Current

IEBO

-100

-100

nA

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-1.0

-1.0

V

IC=-100mA,IB=-0.1mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.5

-1.5

V

IC=-100mA,IB=-0.1mA*

Static Forward Current

Transfer Ratio

hFE

4K

10K

20K

4K

2K

4K

10K

2K

IC=-100µΑ, VCE=-1V†

IC=-10mA, VCE=-5V*

IC=-100mA, VCE=-5V*

IC=-500mA, VCE=-5V*

Transition Frequency

fT

200 Typical

200 Typical

MHz IC=-50mA, VCE=-5V

f = 20MHz

Output Capacitance

Cobo

4.5 Typical

4.5 Typical

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for these devices

† Periodic Sample Test Only.

BCV26

BCV46

C

B

E

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