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BD243 数据表(PDF) 2 Page - Bourns Electronic Solutions

部件名 BD243
功能描述  NPN SILICON POWER TRANSISTORS
PDF  5 Pages
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制造商  BOURNS [Bourns Electronic Solutions]
网页  http://www.bourns.com
标志 BOURNS - Bourns Electronic Solutions

BD243 数据表(HTML) 2 Page - Bourns Electronic Solutions

  BD243 Datasheet HTML 1Page - Bourns Electronic Solutions BD243 Datasheet HTML 2Page - Bourns Electronic Solutions BD243 Datasheet HTML 3Page - Bourns Electronic Solutions BD243 Datasheet HTML 4Page - Bourns Electronic Solutions BD243 Datasheet HTML 5Page - Bourns Electronic Solutions  
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BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
2
PRODU CT
INFORMA TION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
BD243
BD243A
BD243B
BD243C
45
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE =115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD243
BD243A
BD243B
BD243C
0.4
0.4
0.4
0.4
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB =0
IB =0
BD243/243A
BD243B/243C
0.7
0.7
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC =0
1
mA
hFE
Forward current
transfer ratio
VCE =
4 V
VCE =
4 V
IC = 0.3 A
IC = 3 A
(see Notes 5 and 6)
30
15
VCE(sat)
Collector-emitter
saturation voltage
IB =
1 A
IC = 6 A
(see Notes 5 and 6)
1.5
V
VBE
Base-emitter
voltage
VCE =
4 V
IC = 6 A
(see Notes 5 and 6)
2
V
hfe
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
|h
fe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.92
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20 Ω
IB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%
0.3
µs
toff
Turn-off time
1µs



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