Nexperia

PESD1FLEX

FlexRay bus ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tamb = 25 °C

[1]

-

-

24

V

VBR

breakdown voltage

IR = 5 mA; Tamb = 25 °C

[1]

25.4

27.8

30.3

V

IRM

reverse leakage current VRWM = 24 V; Tamb = 25 °C

[1]

-

1

50

nA

Cd

diode capacitance

[1]

-

11

17

pF

f = 1 MHz; VR = 0 V; Tamb = 25 °C

[2]

-

0.1

-

%

ΔCd/Cd

diode capacitance

matching

f = 1 MHz; VR = 2.5 V; Tamb = 25 °C

[2]

-

0.1

-

%

IPP = 1 A; tp = 8/20 µs; Tamb = 25 °C

[3] [1] -

-

40

V

VCL

clamping voltage

IPPM = 3 A; tp = 8/20 µs; Tamb = 25 °C

[3] [1] -

-

70

V

Rdiff

differential resistance

IR = 1 mA; Tamb = 25 °C

[1]

-

-

300

Ω

[1] Measured from pin 1 or 2 to pin 3.

[2] ∆Cd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.

[3] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

006aaa257

103

102

104

PPP

(W)

10

tp (µs)

1

104

103

10

102

Tamb = 25 °C

Fig. 3. Peak pulse power as a function of exponential

pulse duration; typical values

Tj (°C)

0

200

150

50

100

001aaa193

0.4

0.8

1.2

PPP

0

PPP(25°C)

Fig. 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

PESD1FLEX

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Nexperia B.V. 2021. All rights reserved

Product data sheet

7 November 2021

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