Dual P-Channel Enhancement Mode Field Effect Transistor

CEM6967

FEATURES

-60V, -3.3A, RDS(ON) = 115mW @VGS = -10V.

RDS(ON) = 150mW @VGS = -4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

-60

2

-13.2

-3.3

±20

V

W

A

A

V

1

SO-8

1

D1

D1

D2

D2

S1

G1

S2

G2

8

7

6

5

1

2

3

4

RoHS compliant.

http://www.cet-mos.com

Rev 1. 2022.April

Details are subject to change without notice .

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

62.5

RqJA