PDTA115TS datasheet(6/18 Pages) NEXPERIA

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PDTA115T_SER_5

Product data sheet

Rev. 05 — 2 September 2009

5 of 17

NXP Semiconductors

PDTA115T series

PNP resistor-equipped transistors; R1 = 100 k

Ω, R2 = open

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise speciﬁed

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −50 V; IE = 0 A

−100

ICEO

collector-emitter

cut-off current

VCE = −30 V; IB = 0 A

−1

µA

VCE = −30 V; IB = 0 A;

Tj = 150 °C

−50

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC = 0 A

−100

hFE

DC current gain

VCE = −5 V; IC = −1 mA

100

VCEsat

collector-emitter

saturation voltage

IC = −5 mA; IB = −0.25 mA

−150

bias resistor 1 (input)

100

130

Ω

collector capacitance

VCB = −10 V; IE = ie = 0 A;

f=1MHz

--3

VCE = −5 V.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −40 °C.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −40 °C.

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

001aab511

IC (mA)

−10−1

−102

−10

−1

102

103

hFE

(1)

(2)

(3)

001aab512

IC (mA)

−10−1

−102

−10

−1

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

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