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BC550C 数据表(PDF) 2 Page - NXP Semiconductors |
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BC550C 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1999 Apr 22 2 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM182 3 2 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC549 − 30 V BC550 − 50 V VCEO collector-emitter voltage open base BC549 − 30 V BC550 − 45 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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