D18AP2WF

Document number: DS43849 Rev. 1 - 2

2 of 5

www.diodes.com

July 2021

© Diodes Incorporated

D18AP2WF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Peak Pulse Power Dissipation (Note 5) 10/1000µs

8/20µs

PPK

225

1125

W

Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 6)

IFSM

35

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

DC Steady-State Power Dissipation (Note 7)

PD

1.0

W

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

330

°C/W

Thermal Resistance, Junction to Soldering Point (Note 8)

RθJS

70

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Reverse

Standoff

Voltage

Breakdown Voltage

VBR @ IT (Note 9)

Test Current

Max.

Reverse

Leakage @

VRWM

Max.

Clamping

Voltage @

IPP

Max. Peak Pulse

Current IPP

(Note 5)

Marking Code

VRWM (V)

Min (V)

Max (V)

IT (mA)

IR (µA)

VC (V)

(A)

18

20.0

22.1

1

1

29.2

7.71

P2S

Notes:

5. Non-Repetitive current pulse as shown in Figure 2.

6. 1/2 sine wave (or equivalent square wave), pulse width = 8.3ms, duty cycle = 4 pulses/minute maximum.

7. Device mounted on 1"x1", FR-4 PCB; 2 oz. Cu pad layout.

8. Theoretical RJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.

9. VBR measured at pulse test current IT with tP 5.0ms at TA = +25°C.