VB1630 datasheet(4/9 Pages) VBSEMI

部件名	VB1630

功能描述	N-Channel 60-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

标志

4 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

0.1

1.2

1.5

1.8

2.1

2.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.10

0.15

0.20

0.25

0.30

0.35

345

910

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =4.5 A

Time (s)

600

0.1

0.01

100

TA = 25 °C

Single Pulse

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

0.1

TA = 25 °C

Single Pulse

1ms

10 ms

100 ms

0.01

1s,10s

BVDSS Limited

100

100 µs

Limited byRDS(on)*

VB1630

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