2

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-

-

110

°C/W

Maximum Junction-to-Ambient

(PCB Mount)a

RthJA

--

50

Maximum Junction-to-Case (Drain)

RthJC

--

3.0

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

650

-

-

V

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

-

0.88

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

-

-

100

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

-

-

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 1.0A b

-

8

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 1.0 A

1.4

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = - 25 V,

f = 1.0 MHz, see fig. 5

-

350

-

pF

Output Capacitance

Coss

-48

-

Reverse Transfer Capacitance

Crss

-8.6

-

Total Gate Charge

Qg

VGS = 10 V

ID = 1.0 A, VDS = 360 V,

see fig. 6 and 13b

--

18

nC

Gate-Source Charge

Qgs

--

3.0

Gate-Drain Charge

Qgd

--

8.9

Turn-On Delay Time

td(on)

VDD = 300 V, ID = 1.0 A,

Rg = 18 Ω, RD = 135 Ω, see fig. 10b

-10

-

ns

Rise Time

tr

-23

-

Turn-Off Delay Time

td(off)

-30

-

Fall Time

tf

-25

-

Internal Drain Inductance

LD

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

LS

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

2.0

A

Pulsed Diode Forward Currenta

ISM

--

8.0

Body Diode Voltage

VSD

TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb

--

1.6

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb

-

290

580

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.67

1.3

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G

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