Nexperia

BAS116LS

Low-leakage diode

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

K

cathode

2

A

anode

Transparent

top view

2

1

DFN1006BD-2 (SOD882BD)

aaa-028035

K

A

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAS116LS

DFN1006BD-2 Leadless ultra small plastic package with side-wettable

flanks (SWF); 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm

x 0.47 mm body

SOD882BD

7. Marking

Table 4. Marking codes

Type number

Marking code

BAS116LS

9C

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

Tamb = 25 °C

-

75

V

VRRM

repetitive peak reverse

voltage

-

85

V

IF

forward current

Tamb = 25 °C

[1]

-

325

mA

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25; Tamb = 25 °C

-

700

mA

tp = 100 µs; square wave

-

4

A

tp = 1 ms; square wave

-

1.5

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave

-

0.5

A

[1]

-

345

mW

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

645

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), 70 µm single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated, mounting pad for cathode 1 cm².

BAS116LS

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Product data sheet

3 January 2022

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