| 数据搜索系统,热门电子元器件搜索 |
|
STTH812DI 数据表(PDF) 4 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STTH812DI 数据表(HTML) 4 Page - STMicroelectronics |
|
4 / 11 page ![]() Characteristics STTH812 4/11 Figure 5. Peak reverse recovery current versus dIF/dt (typical values) Figure 6. Reverse recovery time versus dIF/dt (typical values) 0 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 400 450 500 I (A) RM dI /dt(A/µs) F I =2 x I FF(AV) I=I FF(AV) I =0.5 x I FF(AV) V =600V T =125°C R j 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr dI /dt(A/µs) F I =2 x I FF(AV) I=I FF(AV) I =0.5 x I FF(AV) V =600V T =125°C R j Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Softness factor versus dIF/dt (typical values) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 300 350 400 450 500 Q (µC) rr dI /dt(A/µs) F V =600V T =125°C R j I =2 x I FF(AV) I=I FF(AV) I =0.5 x I FF(AV) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250 300 350 400 450 500 S factor I 2xI T =125°C FF(AV) j ≤ V =600V R dI /dt(A/µs) F Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (typical values) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 25 50 75 100 125 IRM QRR S factor T (°C) j I=I Reference: T =125°C FF(AV) j V =600V R trr 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 V (V) FP dI /dt(A/µs) F I=I T =125°C FF(AV) j |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |