6.5 Electrical Characteristics (continued)

specified at TJ = 25°C, VIN = VOUT(nom) + 1.0 V or VIN = 2.5 V (whichever is greater), IOUT = 1 mA, VON/OFF = 2 V, CIN = 1.0

µF, and COUT = 2.2 µF (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP MAX UNIT

ION/OFF

ON/OFF input current

VON/OFF = 0 V

Legacy chip

0.01

uA

New chip

0.42

uA

VON/OFF = 0 V, VOUT + 1 ≤ VIN ≤ 16 V,–40°C ≤ TJ ≤

125°C

Legacy chip

-1

uA

New chip

-0.9

uA

VON/OFF = 5 V

Legacy chip

5

uA

New chip

0.011

uA

VON/OFF = 5 V, VOUT + 1 ≤ VIN ≤ 16 V, –40°C ≤ TJ ≤

125°C

Legacy chip

15

uA

New chip

2.20

uA

IO(PK)

Peak Output Current

VOUT ≥ VO(NOM) –5% (steady state)

Legacy chip

300

350

mA

New chip

300

350

mA

IO(SC)

Short Output Current

RL = 0 Ω (steady state)

Legacy chip

400

mA

New chip

375

mA

ΔVO/ΔVIN

Ripple Rejection

f = 1 kHz, CBYPASS = 10 nF, COUT = 10 µF

Legacy chip

45

dB

New chip

78

dB

Vn

Output noise voltage

Bandwidth = 300 Hz to 50 kHz, CBYPASS = 10 nF, COUT

= 2.2 µF, VOUT = 3.3V, ILOAD = 150 mA

Legacy chip

30

µVRM

S

Bandwidth = 300 Hz to 50 kHz, CBYPASS = 10 nF, COUT

= 2.2 µF, VOUT = 3.3V, ILOAD = 150 mA

New chip

30

µVRM

S

Tsd+

Thermal shutdown

threshold

Shutdown, temperature increasing

New chip

170

°C

Tsd-

Reset, temperature decreasing

150

(1)

Dropout voltage (VDO) is defined as the input-to-output differential at which the output voltage drops 100 mV below the value measured

with a 1-V differential. VDO is measured with VIN = VOUT(nom) - 100mV for fixed output devices.

LP2985

SLVS522Q – JULY 2004 – REVISED DECEMBER 2022

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