1996 Jul 29

2

Philips Semiconductors

Product specification

N-channel silicon junction

field-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

FEATURES

• Interchangeability of drain and source connections

• Frequency up to 450 MHz.

APPLICATIONS

• VHF and UHF amplifiers

• Mixers

• General purpose switching.

DESCRIPTION

General purpose N-channel symmetrical silicon junction

field-effect transistors in a plastic TO-92 variant package.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN

SYMBOL

DESCRIPTION

BF246A; BF246B; BF246C

1

d

drain

2

g

gate

3

s

source

BF247A; BF247B; BF247C

1

d

drain

2

s

source

3

g

gate

Fig.1

Simplified outline (TO-92 variant)

and symbol.

handbook, halfpage

1

3

2

MAM257

s

d

g

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−±25

V

gate-source cut-off voltage

−0.6

−−14.5

V

drain current

BF246A; BF247A

30

−

80

mA

BF246B; BF247B

60

−

140

mA

BF246C; BF247C

110

−

250

mA

total power dissipation

−−

400

mW

y

forward transfer admittance

f=1kHz

8

−−

mS

reverse transfer capacitance

f=1MHz

−

3.5

−

pF

operating junction temperature

−−

150

°C