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AD8563ARMZ-R2 数据表(PDF) 3 Page - Analog Devices |
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AD8563ARMZ-R2 数据表(HTML) 3 Page - Analog Devices |
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3 / 15 page ![]() Preliminary Technical Data AD8563 Rev. PrA | Page 3 of 15 SPECIFICATIONS ELECTRICAL CHARACTERISTICS VCC = 5.0 V, VCM = 2.5 V, VREF = VCC/2, VIN = VINP − VINN, RLOAD = 10 kΩ, TA = 25°C, G = 100, unless specified. See Table 5 for gain setting resistor values. Temperature specifications guaranteed by characterization. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Input Offset Voltage VOS G = 1000 25 μV G = 100 25 μV G = 10 50 μV G = 1 350 μV vs. Temperature ΔVOS/ ΔT G = 1000, −40°C ≤ TA ≤ +125°C 0.01 0.1 μV/°C G = 100, −40°C ≤ TA ≤ +125°C 0.01 0.1 μV/°C G = 10, −40°C ≤ TA ≤ +125°C 0.1 0.3 μV/°C G = 1, −40°C ≤ TA ≤ +125°C 0.7 3 μV/°C Input Bias Current IB 0.3 1 nA −40°C ≤ TA ≤ +125°C 2 nA Input Offset Current IOS 2 nA VREF Pin Current IREF 0.02 1 nA Input Operating Impedance Differential 75||2 MΩ||pF Common Mode 100||2 MΩ||pF Input Voltage Range 0 3.0 V Common-Mode Rejection CMR G = 100, VCM = 0 V to 2.85 V 120 140 dB G = 100, VCM = 0 V to 2.85 V, −40°C ≤ TA ≤ +125°C 105 140 G = 10, VCM = 0 V to 2.85 V, −40°C ≤ TA ≤ +125°C 100 120 dB Gain Error G = 100, VCM = 12.125 mV, VO = 0.075 V to 4.925 V 0.25 % G = 10, VCM = 121.25 mV , VO = 0.075 V to 4.925 V 0.5 % Gain Drift G = 1, 10, 100, 1000, −40°C ≤ TA ≤ +125°C 50 ppm/°C Nonlinearity G = 100, VCM = 12.125 mV, VO = 0.075 V to 4.925 V 0.006 % FS G = 10, VCM = 121.25 mV, VO = 0.075 V to 4.925 V 0.035 % FS VREF Range 0.9 4.1 V OUTPUT CHARACTERISITICS Output Voltage High VOH 4.925 V Output Voltage Low VOL 0.075 V Short-Circuit Current ISC ±35 mA POWER SUPPLY Power Supply Rejection PSR G = 100, VS = 2.7 V to 5.5 V, VCM = 0 V 100 120 dB G = 10, VS = 2.7 V to 5.5 V, VCM = 0 V 90 106 dB Supply Current ISY IO = 0 mA, VIN = 0 V 1.1 1.3 mA −40°C ≤ TA ≤ +125°C 1.5 mA Supply Current Shutdown Mode ISD 2 4 μA ENABLE INPUTS Logic High Voltage 2.40 V Logic Low Voltage 0.80 V NOISE PERFORMANCE Voltage Noise en p-p f = 0.01 Hz to 10 Hz 0.7 μV p-p Voltage Noise Density en G = 100, f = 1 kHz 35 nV/√Hz G = 10, f = 1 kHz 150 nV/√Hz Internal Clock Frequency 40 kHz Signal Bandwidth1 G = 1 to 1000 1 kHz 1 Higher bandwidths result in higher noise. |
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