IRF640T datasheet(3/12 Pages) STMICROELECTRONICS

部件名	IRF640T

功能描述	N-channel 200V - 0.15Ω - 15A - TO-220 MESH OVERLAY??Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 12 page

IRF640T

Electrical ratings

Rev 1

3/12

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

200

VGS

Gate-source voltage

± 20

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating factor

0.72

W/°C

dv/dt(2)

ISD ≤15A, di/dt ≤300A/µs, VDD =80%V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.38

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche curent, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

110

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