CRYSTAL OSCILLATORS

357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881

www.nelfc.com

Data Sheet 0635E

OF-X8HXXXXX Series

Parameter

Symb

Condition

Min

Typ

Max

Unit

Note

Absolute Maximum Ratings

Input Break

Down Voltage

Vcc

-0.5

13.0

V

Storage temper.

Ts

-40

85

°C

Control Voltage

Vc

-1

9

V

Electrical

Frequency

F

4.8

10.000

160

MHz

1*

vs. Temp.

±10

ppb

See chart below

Frequency stability

∆F/F

vs. Supply

1

2

ppb/V

Aging

∆F/F

per day

per year

5E-10

1E-7

after 30 days

5E-8 available2*

After Reflow

∆F/F

Per profile below

0.1

0.2

ppm

Each time

Allan Variance

.1s to 10s

1E-11

SSB Phase Noise

1Hz

10 Hz

100 Hz

1 KHz

10 KHz

-90

-120

-150

-153

-160

dBc/Hz

3*

Retrace

After 30 minutes

±10

ppb

G-sensitivity

worst direction

±1.0

ppb/G

Input Voltage

Vcc

4.75

3.15

11.4

5.0

3.3

12.0

5.25

3.45

12.6

V

See chart below to specify

Power consumption

P

steady state, 25°C

steady state, -30°C

start-up @ -30°C

0.8

1.5

2.5

1.2

3.2

W

Standard Operating

Temperature, for Op

Temp. 85 °C ad 20%

Spectral Purity

Subharmonics

Spurious

Harmonics/Sine

-50

-35

-45

-80

-30

dBc

At Higher Frequencies

Load

10KOhm//15pF (HCMOS/TTL), 50 Ohm (Sinewave)

Warm-up time

τ

to 0.1ppm accuracy

3

5

minutes

3 min. at 12V

Output Waveform

3.3V HCMOS/TTL compatible or Sinewave (+7± 3) dBm

-25dBm Harmonics at sine

Control voltage

Vc

0

4.0

V

Pull range

from nominal F

±0.5

±1

ppm

Deviation slope

Monotonic, posit

0.4

ppm/V

Setability

Vc0

@25°C, Fnom.

1.0

2.0

3.0

V

Environmental and Mechanical

Operating temp. range

-30°C to 70°C Standard, Other options – see chart below

Mechanical Shock

Per MIL-STD-202, 30G, 11ms

Vibration

Per MIL-STD-202, 5G to 2000 Hz

Soldering Conditions

See MAX reflow profile below

Electrical Connections

Pin Out

Pin #1-Vc ; Pin#2 – Vref; Pin #3 – Vcc; Pin #4- Output ; Pin #5- GND; 4*

Notes:

1* Higher frequencies can be achieved either by using higher frequency crystals or by low noise analog harmonic multiplication. Both

methods have advantages and drawbacks. If lowest possible phase noise on the noise floor is most important – high frequency crystal will be used. If

phase noise close to the carrier and aging are more important – multiplication will be used. Please consult factory for your specific requirement.

2* Aging rate is usually proportional to the operating frequency, unless higher frequency is achieved by multiplication. Keep it in mind

while specifying aging.

3* Phase noise deteriorates with frequencies going higher. If analog multiplication is used to achieve higher frequency the phase noise

roughly follows the formula of additional 20LogN, where N is a multiplication factor across entire frequency offset range. If higher frequency is

achieved by using higher frequency crystal phase noise close to the carrier deteriorates due to the lower Q of the crystal and is usually worse,

compared to multiplied solution. On the noise floor, however it remains more or less the same. This design usually starts utilizing multiplication

techniques in the range of 25 MHz to 35 MHz.

4* Pads “A” and “B” may or may not appear on the actual package. They can be used when additional functions i.e. “Oven Ready” alarm

or “Tristate” are specified. Please consult factory.