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MMBR901LT1 数据表(PDF) 2 Page - NXP Semiconductors |
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MMBR901LT1 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 4 page ![]() MMBR901LT1, T3 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 15 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 25 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 2.0 — — Vdc Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ICBO — — 50 nAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 5.0 Vdc) hFE 50 — 200 — FUNCTIONAL TESTS Minimum Noise Figure (VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz) (VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz) NFmin — 1.9 — dB SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) Cobo — — 1.0 pF Common–Emitter Amplifier Gain (VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) Gpe — 12 — dB Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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