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STTH2R02A 数据表(PDF) 2 Page - STMicroelectronics |
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STTH2R02A 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Characteristics STTH2R02 2/9 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.68 x IF(AV) + 0.06 IF 2 (RMS) Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IFRM Repetitive peak forward current DO-15(1) tp = 5 µs, F = 5 kHz 60 A SMA, SMB IF(RMS) RMS forward current DO-15 60 A SMA, SMB IF(AV) Average forward current, δ = 0.5 DO-15 Tlead = 90° C 2A SMA, SMB Tc = 90° C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A Tstg Storage temperature range -65 to + 175 ° C Tj Maximum operating junction temperature 175 ° C 1. On infinite heatsink with 10 mm lead length Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to lead Lead Length = 10 mm on infinite heatsink DO-15 45 ° C/W Junction to case SMA, SMB 30 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 3 µA Tj = 125° C 2 20 VF (2) Forward voltage drop Tj = 25° C IF = 6 A 1.20 V Tj = 25° C IF = 2 A 0.89 1.0 Tj = 100° C 0.76 0.85 Tj = 150° C 0.70 0.80 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % |
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