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VBO125 数据表(PDF) 2 Page - IXYS Corporation |
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VBO125 数据表(HTML) 2 Page - IXYS Corporation |
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2 / 2 page ![]() © 2003 IXYS All rights reserved 2 - 2 F4 IXYS reserves the right to change limits, test conditions and dimensions. VBO 125 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode I FSM: Crest value. t: duration Fig.5 Maximum forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor Fig. 6 Transient thermal impedance per diode or thyristor, calculated 1 1.5 0 40 80 120 160 200 I F VF A V T=150°C T=25°C 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] I (A) FSM TVJ=45°C TVJ=150°C 1800 1600 I ------ I FSM F(OV) 0 VRRM 1/2 VRRM 1 VRRM 2 4 6 10 TVJ=45°C TVJ=150°C t [ms] 1 10 10 10 3 4 5 As 2 100 50 0 50 100 150 200 250 300 85 90 95 100 105 110 115 120 125 130 135 140 145 150 TC °C DC sin.180° rec.120° rec.60° rec.30° 1.77 0.77 0.44 0.28 0.19 0.11 = RTHCA [K/W] IFAVM [A] Tamb [K] 050 100 150 [W] PVTOT PSB 125 50 100 150 200 0 50 100 150 DC sin.180° rec.120° rec.60° rec.30° T (°C) C IdAV [A] 0.01 0.1 1 10 0.5 1 1.5 K/W Zth t[s] Z thJK Z thJC |
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