1995 Apr 07

2

Philips Semiconductors

Product specification

NPN 2 GHz RF power transistor

BFG11; BFG11/X

FEATURES

• High power gain

• High efficiency

• Small size discrete power amplifier

• 1.9 GHz operating area

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB operation in hand-held radio

equipment at 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistors encapsulated in a

plastic, 4-pin dual-emitter SOT143 package.

MARKING

TYPE NUMBER

CODE

BFG11

N72

BFG11/X

N73

PINNING

PIN

DESCRIPTION

BFG11 (see Fig.1)

1

collector

2

base

3

emitter

4

emitter

BFG11/X (see Fig.1)

1

collector

2

emitter

3

base

4

emitter

Fig.1 SOT143.

handbook, 2 columns

Top view

MSB014

12

3

4

QUICK REFERENCE DATA

MODE OF OPERATION

f

(GHz)

(V)

(mW)

(dB)

(%)

Pulsed, class-AB, duty cycle < 1 : 8

1.9

3.6

400

≥4

≥50