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VBA5251K 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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VBA5251K 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 14 page ![]() SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA N-Ch 250 - - V VGS = 0 V, ID = -250 μA P-Ch -250 - - VDS Temperature Coefficient V DS/TJ ID = 250 μA N-Ch - 70 - mV/°C ID = -250 μA P-Ch - -103 - VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 μA N-Ch - -5.7 - ID = -250 μA P-Ch - 4.5 - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA N-Ch 1.5 - 2.5 V VDS = VGS, ID = -250 μA P-Ch -1.5 - -2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V N-Ch - - 100 nA P-Ch - - -100 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V N-Ch - - 1 μA VDS = -100 V, VGS = 0 V P-Ch - - -1 VDS = 100 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10 VDS = -100 V, VGS = 0 V, TJ = 55 °C P-Ch - - -10 On-State Drain Current b ID(on) VDS = 5 V, VGS = 10 V N-Ch 10 - - A VDS = -5 V, VGS = -10 V P-Ch -10 - - Drain-Source On-State Resistance b RDS(on) VGS = 10 V, ID = 2 A N-Ch - 0.0 95 VGS = -10 V, ID = -2 A P-Ch - 0. 243 VGS = 4.5 V, ID = 1.5 A N-Ch - 0. 135 VGS = -4.5 V, ID = -1 A P-Ch - 0. 285 Forward Transconductance b gfs VDS = 15 V, ID = 2 A N-Ch - 9 - S VDS = -15 V, ID = -2 A P-Ch - 9.3 - Dynamic a Input Capacitance Ciss N-Channel VDS = 50 V, VGS = 0 V, f = 1 MHz P-Channel VDS = -50 V, VGS = 0 V, f = 1 MHz N-Ch - 360 - pF P-Ch - 650 - Output Capacitance Coss N-Ch - 130 - P-Ch - 65 - Reverse Transfer Capacitance Crss N-Ch - 20 - P-Ch - 40 - Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 2.5 A N-Ch - 7.5 11.5 nC VDS = -50 V, VGS = -10 V, ID = -2.3 A P-Ch - 24 36 N-Channel VDS = 50 V, VGS = 4.5 V, ID = 2.5 A P-Channel VDS = -50 V, VGS = -4.5 V, ID = -2 A N-Ch - 4 6 P-Ch - 11.6 18 Gate-Source Charge Qgs N-Ch - 1.2 - P-Ch - 3.8 - Gate-Drain Charge Qgd N-Ch - 2 - P-Ch - 5 - Gate Resistance Rg f = 1 MHz N-Ch 0.6 3.3 6.6 P-Ch 3 13 26 VBA5251K www.VBsemi.com 2 - - - - - 服务热线:400-655-8788 |
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