DMHT10H032LFJ

Document number: DS42506 Rev. 2 - 2

2 of 7

www.diodes.com

June 2020

© Diodes Incorporated

DMHT10H032LFJ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

6

5

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

40

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

2.5

A

Pulsed Body Diode Current (10µs Pulse, Duty Cycle = 1%)

ISM

40

A

Avalanche Current (Note 7) L = 0.3mH

IAS

13

A

Avalanche Energy (Note 7) L = 0.3mH

EAS

25.3

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

0.9

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

130

°C/W

Total Power Dissipation (Note 6)

PD

1.9

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

64

°C/W

Thermal Resistance, Junction to Case (Note 6)

RθJC

11

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

100

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS =

20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.3

—

2.5

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

25

33

m

Ω

VGS = 10V, ID = 6A

—

34

50

VGS = 4.5V, ID = 4A

Diode Forward Voltage

VSD

—

0.8

1.0

V

VGS = 0V, IS = 6A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

683

—

pF

VDS = 50V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

165

—

pF

Reverse Transfer Capacitance

Crss

—

6.9

—

pF

Gate Resistance

Rg

—

1.2

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

6.3

—

nC

VDS = 50V, ID = 6A

Total Gate Charge (VGS = 10V)

Qg

—

11.9

—

nC

Gate-Source Charge

Qgs

—

2.0

—

nC

Gate-Drain Charge

Qgd

—

3.1

—

nC

Turn-On Delay Time

tD(ON)

—

4.1

—

ns

VDS = 50V, RL = 5.85Ω

VGS = 10V, RGEN = 3Ω

Turn-On Rise Time

tR

—

4.5

—

ns

Turn-Off Delay Time

tD(OFF)

—

12.5

—

ns

Turn-Off Fall Time

tF

—

9.3

—

ns

Reverse Recovery Time

tRR

—

31.5

—

ns

IF = 6A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

—

94.6

—

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.