DMN3012LEG

Document number: DS41633 Rev. 2 - 2

2 of 10

www.diodes.com

March 2019

© Diodes Incorporated

DMN3012LEG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Q1

Q2

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±10

V

Continuous Drain Current @ VGS = 5V

TC = +25C

ID

20

A

TC = +70C

16

TA = +25C

ID

10

A

TA = +70C

8

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

70

100

A

Continuous Source-Drain Diode Current (Note 5)

IS

2.7

3.2

A

Avalanche Current (Note 6) L = 0.1mH

IAS

34

50

A

Avalanche Energy (Note 6) L = 0.1mH

EAS

58

125

mJ

ESD Capability(Note 9)

HBM

300

V

CDM

1000

V

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation

TC = +25°C

PD

2.2

W

TC = +70°C

1.4

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

58

°C/W

t<10s

36

Thermal Resistance, Junction to Case (Note 5)

RJC

9.5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

30

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

μA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±10V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1

—

2.1

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

10.5

12

m

Ω

VGS = 5V, ID = 15A

Diode Forward Voltage

VSD

—

—

1.0

V

VGS = 0V, IS = 15A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

650

850

pF

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

314

410

Reverse Transfer Capacitance

Crss

—

12

16

Gate Resistance

Rg

—

1.63

3.3

Ω

VDS = 0V, VGS = 0V, f =

1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

4.7

6.1

nC

VDS = 15V, ID = 15A

Total Gate Charge at VTH

Qg(TH)

—

0.91

—

Gate-Source Charge

Qgs

—

1.6

—

Gate-Drain Charge

Qgd

—

0.9

—

Turn-On Delay Time

tD(ON)

—

5.1

7.7

ns

VDD = 15V, VGS = 4.5V,

ID = 15A, Rg = 2Ω

Turn-On Rise Time

tR

—

2.7

—

Turn-Off Delay Time

tD(OFF)

—

6.4

9.6

Turn-Off Fall Time

tF

—

2.3

—

Reverse Recovery Time

tRR

—

24.5

—

ns

IF = 15A, di/dt = 300A/μs

Reverse Recovery Charge

QRR

—

8.3

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

9. Based on characterization data only. Not subject to production testing.