DMNH6035SPDWQ

Document number: DS40225 Rev. 8 - 2

2 of 7

www.diodes.com

March 2023

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DMNH6035SPDWQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current, VGS = 10V (Note 6)

TC = +25°C

TC = +100°C

ID

33

21

A

Maximum Body Diode Forward Current (Note 6)

IS

33

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

132

A

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

ISM

132

A

Avalanche Current, L = 1mH

IAS

21.4

A

Avalanche Energy, L = 1mH

EAS

230

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

62

°C/W

Total Power Dissipation

TA = +25°C

PD

2.4

W

Thermal Resistance, Junction to Case (Note 6)

RθJC

2.2

°C/W

Total Power Dissipation

TC = +25°C

PD

68

W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics N-Channel (@TC = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—



—



1

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

24

35

m

Ω

VGS = 10V, ID = 15A

—

33

44

VGS = 4.5V, ID = 10A

Diode Forward Voltage

VSD

—

0.75

1.2

V

VGS = 0V, IS = 2.6A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

879

—

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

227

—

Reverse Transfer Capacitance

Crss

—

17

—

Gate Resistance

RG

—

2.4

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 6V)

Qg

—

10

—

nC



VDS = 30V, ID = 20A

Total Gate Charge (VGS = 10V)

Qg

—

16

—

Gate-Source Charge

Qgs

—

2

—

Gate-Drain Charge

Qgd

—

4.9

—

Turn-On Delay Time

tD(ON)

—

3.8

—

ns

VDD = 30V,

VGS = 10V, RG = 4.7Ω, ID = 20A

Turn-On Rise Time

tR

—

7.7

—

Turn-Off Delay Time

tD(OFF)

—

19.5

—

Turn-Off Fall Time

tF

—

5.8

—

Body Diode Reverse Recovery Time

tRR

—

28

—

ns

IF = 20A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

28

—

nC

IF = 20A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate; measured with 1 channel active.

6. Thermal resistance from junction to solder point (on the exposed drain pin); measured with 1 channel active.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.