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Nexperia

PMST4403

40 V, 600 mA PNP switching transistor

PMST4403

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Product data sheet

1 August 2016

4 / 13

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -40 V; IE = 0 A; Tamb = 25 °C

-

-

-50

nA

ICBO

collector-base cut-off

current

VCB = -40 V; IE = 0 A; Tj = 125 °C

-

-

-10

µA

IEBO

emitter-base cut-off

current

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-

-

-50

nA

VCE = -1 V; IC = -0.1 mA; Tamb = 25 °C

30

-

-

VCE = -1 V; IC = -1 mA; Tamb = 25 °C

60

-

-

VCE = -1 V; IC = -10 mA; Tamb = 25 °C

100

-

-

VCE = -2 V; IC = -150 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 ; Tamb = 25 °C

100

-

300

hFE

DC current gain

VCE = -2 V; IC = -500 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 ; Tamb = 25 °C

20

-

-

IC = -150 mA; IB = -15 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-

-400

mV

VCEsat

collector-emitter

saturation voltage

IC = -500 mA; IB = -50 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-

-750

mV

IC = -150 mA; IB = -15 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-

-950

mV

VBEsat

base-emitter saturation

voltage

IC = -500 mA; IB = -50 mA; pulsed; tp ≤

300 µs; δ ≤ 0.02 ; Tamb = 25 °C

-

-

-1.3

V

td

delay time

-

-

15

ns

tr

rise time

-

-

30

ns

ton

turn-on time

-

-

40

ns

ts

storage time

-

-

300

ns

tf

fall time

-

-

50

ns

toff

turn-off time

IC = -150 mA; IBon = -15 mA;

IBoff = 15 mA; Tamb = 25 °C

-

-

350

ns

CC

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

8.5

pF

CE

emitter capacitance

VEB = -500 mV; IC = 0 A; ic = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

35

pF

fT

transition frequency

VCE = -10 V; IC = -20 mA; f = 100 MHz;

Tamb = 25 °C

200

-

-

MHz